منابع مشابه
Simple Photovoltaic Device Based on Multiwall Carbon Nanotube/Silicon Heterojunction
Multiwall carbon nanotubes (MWCNTs) are grown via chemical vapour deposition method directly on a stainless steel substrate. Raman spectroscopy and transmission electron microscopy are the techniques chosen to characterize the structure of the synthesized carbon nanotubes: few structural defects are detected. After their removal from the stainless steel substrate, the as-grown MWCNTs are then a...
متن کاملSimple Photovoltaic Device Based on Multiwall Carbon Nanotube/Silicon Heterojunction
Multiwall carbon nanotubes (MWCNTs) are grown via chemical vapour deposition method directly on a stainless steel substrate. Raman spectroscopy and transmission electron microscopy are the techniques chosen to characterize the structure of the synthesized carbon nanotubes: few structural defects are detected. After their removal from the stainless steel substrate, the as-grown MWCNTs are then a...
متن کاملsimple photovoltaic device based on multiwall carbon nanotube/silicon heterojunction
multiwall carbon nanotubes (mwcnts) are grown via chemical vapour deposition method directly on a stainless steel substrate. raman spectroscopy and transmission electron microscopy are the techniques chosen to characterize the structure of the synthesized carbon nanotubes: few structural defects are detected. after their removal from the stainless steel substrate, the as-grown mwcnts are then a...
متن کاملA Single-Walled Carbon Nanotube Network Gas Sensing Device
The goal of this research was to develop a chemical gas sensing device based on single-walled carbon nanotube (SWCNT) networks. The SWCNT networks are synthesized on Al(2)O(3)-deposted SiO(2)/Si substrates with 10 nm-thick Fe as the catalyst precursor layer using microwave plasma chemical vapor deposition (MPCVD). The development of interconnected SWCNT networks can be exploited to recognize th...
متن کاملSingle-walled Carbon Nanotube (CNT) Field Effect Transistor Device Modeling
We have developed a surface potential based compact model for the single-walled semiconductor CNT field effect transistor (CNT-FET) shown in Figure 1. Our compact modeling results for surface potential, channel charge, gate capacitance and channel current are shown in Figures 2-5 respectively. The model comparison is done using the numerical results of [1-4]. The compact model is developed for ...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2013
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.4828485